Via Method for Lithography Free Contact and Preservation of 2D Materials

Via Method for Lithography Free Contact and Preservation of 2D Materials
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DOI:
10.1021/acs.nanolett.7b05161
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发表时间:
2018-02-01
期刊:
影响因子:
10.8
通讯作者:
Hone, James
Hone, James
中科院分区:
材料科学1区
文献类型:
--
作者:
Telford, Evan J.;Benyamini, Avishai;Hone, James

文献摘要

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原子薄的2D材料跨越电子电路的常见组件,如金属,半导体和绝缘体,并且可以表现出相关的相,如超导性,电荷密度波和磁性。该领域的一个持续挑战是将这些2D材料结合到具有稳健电接触的多层异质结构中,同时防止无序和退化。特别是,保存和研究空气敏感的2D材料已经提出了一个重大的挑战,因为它们在大气条件下容易氧化。我们报告了一种用于接触2D材料的新技术,其中金属通孔接触被集成到绝缘六方氮化硼的薄片中,然后被放置到所需的导电2D层上,避免了直接光刻图案化到2D导体上。金属接触与氮化硼的底表面是平面的,并且形成与多种2D材料的坚固接触。这些结构可以保护空气敏感的2D材料数月而不会降低性能。这种通孔接触技术将提供生产“原子印刷电路板”的能力,这种“原子印刷电路板”可以形成更复杂的多层异质结构的基础。
Atomically thin 2D materials span the common components of electronic circuits as metals, semiconductors, and insulators, and can manifest correlated phases such as superconductivity, charge density waves, and magnetism. An ongoing challenge in the field is to incorporate these 2D materials into multilayer heterostructures with robust electrical contacts while preventing disorder and degradation. In particular, preserving and studying air-sensitive 2D materials has presented a significant challenge since they readily oxidize under atmospheric conditions. We report a new technique for contacting 2D materials, in which metal via contacts are integrated into flakes of insulating hexagonal boron nitride, and then placed onto the desired conducting 2D layer, avoiding direct lithographic patterning onto the 2D conductor. The metal contacts are planar with the bottom surface of the boron nitride and form robust contacts to multiple 2D materials. These structures protect air-sensitive 2D materials for months with no degradation in performance. This via contact technique will provide the capability to produce "atomic printed circuit boards" that can form the basis of more complex multilayer heterostructures.