Closely spaced and separately contacted two-dimensional electron and hole gases by in situ focused-ion implantation
Closely spaced and separately contacted two-dimensional electron and hole gases by in situ focused-ion implantation
复制标题
通过原位聚焦离子注入实现紧密间隔且单独接触的二维电子和空穴气体
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
R. Muhle
中科院分区：
文献类型：
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作者：
M. Pohlt;M. Lynass;J. Lok;W. Dietsche;K. Klitzing;K. Eberl;R. Muhle
已经在GaAs中制备了二维（2D）电子气和2D空穴气的单独接触层，其由厚度低至15 nm的AlGaAs势垒分开。分子束外延生长被中断之前的双层结构的生长，以使用原位聚焦离子束注入图案的接触，延伸到下面的屏障。这两种电荷气体在正向偏压势垒下方和上方的p型和n型接触时形成，并显示出独立的晶体管样行为。
Separately contacted layers of a two-dimensional (2D) electron gas and a 2D hole gas have been prepared in GaAs, which are separated by AlGaAs barriers down to 15 nm thickness. The molecular-beam-epitaxial growth was interrupted just before growth of the double-layer structure in order to use in situ focused-ion-beam implantation to pattern contacts which extend underneath the barrier. The two charge gases form upon biasing the p- and n-type contacts underneath and above the barrier in the forward direction and show independent transistor-like behavior.