Heuristic Detection of the Most Vulnerable Regions in Electronic Devices for Radiation Survivability
Heuristic Detection of the Most Vulnerable Regions in Electronic Devices for Radiation Survivability
复制标题
电子设备中最脆弱区域的启发式检测，以提高辐射生存能力
DOI：
10.1149/2162-8777/ac861a
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发表时间：
2022
影响因子：
2.2
通讯作者：
Pearton, Stephen J.
中科院分区：
文献类型：
--
作者：
Stepanoff, Sergei P.;Rasel, Md Abu;Haque, Aman;Wolfe, Douglas E.;Ren, Fan;Pearton, Stephen J.
随着电子系统变得更大和更复杂，对辐射暴露的最脆弱区域（MVR）的检测变得更加困难和耗时。我们提出了一种启发式的方法，利用设备的机械和热方面来快速识别MVR。我们的方法涉及两个设备的条件的拓扑映射。第一个条件通过热波探测和相位分析识别具有最高机械应变或缺陷和界面密度的区域。第二个条件识别具有高电场的区域。据推测，具有最高热波穿透电阻和电场的区域将对单个事件的入射辐射和潜在的总电离剂量表现出最高的灵敏度。我们的方法实现了一个简单的设计，提高了分析时间的102 -3个数量级，目前的辐射灵敏度映射方法。该设计在经过充分研究的运算放大器LM 124上得到了验证，在识别敏感晶体管QR 1、Q9和Q18时，该设计与文献一致，具有相对较高的相位百分位值（> 70%）和ΔT值（> 50%），满足提高辐射敏感性的条件。随后是静态随机存取存储器（HM-6504）和Xilinx阿蒂克斯-7 35 T系统芯片上的实验结果。
As electronic systems become larger and more complex, detection of the most vulnerable regions (MVR) to radiation exposure becomes more difficult and time consuming. We present a heuristic approach where the mechanical and thermal aspects of devices are exploited to quickly identify MVRs. Our approach involves the topological mapping of two device conditions. The first condition identifies regions with the highest mechanical strain or density of defects and interfaces via thermal wave probing and phase analysis. The second condition identifies regions with high electrical field. It is hypothesized that the region with the highest thermal wave penetration resistance and electrical field will exhibit the highest sensitivity to incoming radiation for single events and potentially, total ionizing dose. Our approach implements a simplistic design that improves analysis time by∼ 2–3 orders of magnitude over current radiation sensitivity mapping methods. The design is demonstrated on the well-studied operational amplifier LM124, which shows agreement with the literature in identifying sensitive transistors–QR1, Q9, and Q18–with relatively high phase percentile values (> 70%) and ΔT percentiles (> 50%), satisfying conditions for elevated radiation susceptibility. This is followed by experimental results on a static random access memory (HM-6504) and a Xilinx Artix-7 35 T system on a chip.