Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5

Enhanced thermopower and low thermal conductivity in p-type polycrystalline ZrTe5
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DOI:
10.1063/1.4997460
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发表时间:
2017-08
期刊:
arXiv: Materials Science
影响因子:
--
通讯作者:
M. Hooda;C. Yadav
M. Hooda;C. Yadav
中科院分区:
其他
文献类型:
--
作者:
M. Hooda;C. Yadav

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据报道,多晶 p 型 ZrTe5 的热电性能在温度 (T) 范围 2 - 340 K 范围内。热电势 (S) 为正,随着 T 的增加,在 340 K 时达到 458 uV/K。费米能量值为 16 meV,表明载流子密度较低,约为 9.5 X 10^18 cm-3。在 38 K 处观察到 S 数据的明显异常,这似乎是 p 型 ZrTe5 固有的。热导率值较低(T = 300 K 时为 2 W/m-K),主要来自晶格部分。电阻率数据显示在 T ~ 150 K 时金属到半导体的转变以及半导体区域的非阿伦尼乌斯行为。品质因数 zT(T = 300 K 时为 0.026)比 HfTe5(0.016)高约 63%,并且优于传统的 SnTe、p 型 PbTe 和双极原始 ZrTe5 化合物。
Thermoelectric properties of polycrystalline p-type ZrTe5 are reported in temperature (T) range 2 - 340 K. Thermoelectric power (S) is positive and reaches up to 458 uV/K at 340 K on increasing T. The value of Fermi energy 16 meV, suggests low carrier density of ~ 9.5 X 10^18 cm-3. A sharp anomaly in S data is observed at 38 K, which seems intrinsic to p-type ZrTe5. The thermal conductivity value is low (2 W/m-K at T = 300 K) with major contribution from lattice part. Electrical resistivity data shows metal to semiconductor transition at T ~ 150 K and non-Arrhenius behavior in the semiconducting region. The figure of merit zT (0.026 at T = 300 K) is ~ 63% higher than HfTe5 (0.016), and better than the conventional SnTe, p-type PbTe and bipolar pristine ZrTe5 compounds.