Refractive index and extinction coefficient of doped polycrystalline silicon films in infrared spectrum
Refractive index and extinction coefficient of doped polycrystalline silicon films in infrared spectrum
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DOI：
10.1088/1757-899x/108/1/012020
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发表时间：
2016-03
期刊：
影响因子：
--
通讯作者：
Xia Zhang;Dacheng Zhang
中科院分区：
文献类型：
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作者：
Xia Zhang;Dacheng Zhang
利用测量的一层材料和多层膜的反射率和透射率，利用光子学和电磁场理论推导出的公式，在反演算的基础上，得到了不同掺杂剂量的多晶硅薄膜的红外光谱折射率和消光系数。计算结果表明，在一定波长范围内，掺杂多晶硅薄膜的折射率随掺杂量的增加而减小，消光系数随掺杂量的增加而增大。这种方法用于测量多晶硅薄膜的折射率和消光系数是有效的，并且具有测量样品制作简单的优点。
The refractive index and extinction coefficient in infrared spectrum of the polycrystalline silicon films with different doped dosages, base on the inverse calculation, are obtained by means of utilizing the measured reflectance and transmittance of a layer of material and multilayer films, and the equations derived from photonics and electromagnetic theory. The calculation results demonstrate that the refractive index of the doped polycrystalline silicon films decreases with the doped dosages increasing and the extinction coefficient increases with the doped dosages increasing for a given wavelength. This method used for determining the refractive index and extinction coefficient of the polycrystalline silicon films is effective and has the advantage of that the measured samples are fabricated simply.