Anisotropy and large magnetoresistance in the narrow-gap semiconductor FeSb2 -: art. no. 155205
Anisotropy and large magnetoresistance in the narrow-gap semiconductor FeSb2 -: art. no. 155205
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DOI：
10.1103/physrevb.67.155205
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发表时间：
2003-04-15
影响因子：
3.7
通讯作者：
Miller, GJ
中科院分区：
文献类型：
--
作者：
Petrovic, C;Kim, JW;Miller, GJ
本文研究了用Sb助熔剂生长的大单晶上FeSb2的磁性、输运和磁输运性质的各向异性。FeSb2的磁化率在100K附近表现出抗磁到顺磁的交叉，沿两个轴的电输运是半导体的，而第三轴在T-cr温度下表现出金属-半导体的交叉，它对电流取向敏感，在H=70K时，T恢复了半导体输运
A study of the anisotropy in magnetic, transport, and magnetotransport properties of FeSb2 has been made on large single crystals grown from Sb flux. Magnetic susceptibility of FeSb2 shows diamagnetic to paramagnetic crossover around 100 K. Electrical transport along two axes is semiconducting, whereas the third axis exhibits a metal-semiconductor crossover at temperature T-cr which is sensitive to current alignment and ranges between 40 and 80 K. In H = 70 kOe semiconducting transport is restored for T