Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures
Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures
复制标题
通过两温结合低温退火工艺优化 1.3 μm InAs/GaAs 量子点的 GaAs 盖层生长
DOI：
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发表时间：
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影响因子：
1.8
通讯作者：
Masao Nishioka
中科院分区：
文献类型：
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作者：
Tao Yang;Yasuhiko Arakawa;Masao Nishioka
