Terahertz radiation from InAs,InGaAs and InSb excited by femtosecond optical pulses at wavelengths of 800 and 1560 nm

Terahertz radiation from InAs,InGaAs and InSb excited by femtosecond optical pulses at wavelengths of 800 and 1560 nm
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由波长为 800 和 1560 nm 的飞秒光脉冲激发的 InAs、InGaAs 和 InSb 的太赫兹辐射

DOI:
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发表时间:
2005
期刊:
Proc.Of 12th International Conference on Narrow Gap Semiconductors
影响因子:
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通讯作者:
Masato Suzuki
Masato Suzuki
中科院分区:
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文献类型:
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作者:
M.Suzuki;M.Tonouchi;K.Fujii;H.Ohtake;T.Hirosumi;Masato Suzuki

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