Nanocomposite Thin Film Based on Ytterbium Fluoride and N,N′-Bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine and Its Application in Organic Light Emitting Diodes as Hole Transport Layer
Nanocomposite Thin Film Based on Ytterbium Fluoride and N,N′-Bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine and Its Application in Organic Light Emitting Diodes as Hole Transport Layer
复制标题
DOI：
10.1021/jp8040555
复制
发表时间：
2008-07
影响因子：
3.7
通讯作者：
Lian Duan;Jing Xie;De-qiang Zhang;Liduo Wang;Guifang Dong;J. Qiao;Y. Qiu
中科院分区：
文献类型：
--
作者：
Lian Duan;Jing Xie;De-qiang Zhang;Liduo Wang;Guifang Dong;J. Qiao;Y. Qiu
我们提出了一种基于氟化镱（YbF3）和N,N'-双（1-萘基）-N,N'-二苯基-1,1'-联苯-4,4'-二胺（NPB）的纳米复合薄膜。透射电子显微镜研究证明存在尺寸为 3−5nm 的 YbF3 纳米颗粒，并且观察到这些纳米颗粒均匀分散在 NPB 中。 YbF3 (50%) 掺杂的 NPB 的电导测量为 1.76 × 10−5 S，远高于纯 NPB 薄膜的 5.81 × 10−8 S 值。然而，与其他 p 掺杂系统不同，吸收光谱研究表明主体 (NPB) 和掺杂剂 (YbF3) 之间没有明显的相互作用。在 4 × 105 V/cm 的电场下，YbF3 (50%) 掺杂的 NPB 的空穴迁移率降至 7.31 × 10−5 cm2/(V s)，而纯 NPB 薄膜的空穴迁移率为 5.87 × 10−4 cm2/(V s)。我们认为，提高薄膜电导率和降低空穴迁移率可以增强内建电场，从而有利于电子注入。由于空穴和电子的平衡得到改善，具有 YbF3-... 的双层器件
We present a nanocomposite thin film based on ytterbium fluoride (YbF3) and N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB). The transmission electron microscopy study testified the presence of YbF3 nanoparticles with a size of 3−5nm, and these nanoparticles were observed to be uniformly dispersed in NPB. The conductance of YbF3 (50%)-doped NPB was measured to be 1.76 × 10−5 S, much higher than the value of 5.81 × 10−8 S for pure NPB film. However, unlike other p-doped systems, the absorption spectrum study shows that there is no obvious interaction between the host (NPB) and the dopant (YbF3). The hole mobility of YbF3 (50%)-doped NPB decreases to 7.31 × 10−5 cm2/(V s) at an electric field of 4 × 105 V/cm, while that of pure NPB film is 5.87 × 10−4 cm2/(V s). We believe that the improved film conductivity and decreased hole mobility can enhance the built-in field and thus favor the electron injection. Due to the improved balance of holes and electrons, a double-layer device with YbF3-...