Electrical signature of the defect associated with gate oxide breakdown
Electrical signature of the defect associated with gate oxide breakdown
复制标题
与栅极氧化层击穿相关的缺陷的电气特征
DOI：
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发表时间：
2006
影响因子：
4.9
通讯作者：
R. Degraeve
中科院分区：
文献类型：
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作者：
W.D. Zhang;J.F. Zhang;C.Z. Zhao;M.H. Chang;G. Groeseneken;R. Degraeve
氧化物击穿是MOS器件的一个重要问题。人们普遍认为，氧化物内产生的缺陷是造成击穿的原因。然而，目前尚不清楚各种产生的缺陷中哪一类是导致故障的主要原因。本文明确表明，捕获截面为 10/sup -15/-10/sup -16/ cm/sup 2/ 的生成空穴陷阱、低场电子陷阱和高场电子陷阱并不是击穿的主要来源。所生成的捕获截面约为 10/sup -14/ cm/sup 2/ 的高场电子陷阱是唯一具有击穿氧化物所需的所有特性的缺陷。本文应该为氧化物击穿建模提供有用的信息。
Oxide breakdown is an important issue for MOS devices. It is widely believed that defects generated within the oxides are responsible for the breakdown. However, it is still not clear which type of the various generated defects is the main cause for the failure. This paper unambiguously shows that generated hole traps, low-field electron traps, and high-field electron traps with a capture cross section of 10/sup -15/-10/sup -16/ cm/sup 2/ are not the main source of the breakdown. The generated high-field electron trap with a capture cross section in the order of 10/sup -14/ cm/sup 2/ is the only defect having all the characteristics required for breaking down the oxide. This paper should provide useful information for modeling oxide breakdown.