Removal of GaAs growth substrates from II–VI semiconductor heterostructures
Removal of GaAs growth substrates from II–VI semiconductor heterostructures
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DOI：
10.1088/0268-1242/29/4/045016
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发表时间：
2013-11
影响因子：
1.9
通讯作者：
S. Bieker;P. Hartmann;T. Kießling;M. Rüth;C. Schumacher;C. Gould;W. Ossau;L. Molenkamp
中科院分区：
文献类型：
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作者：
S. Bieker;P. Hartmann;T. Kießling;M. Rüth;C. Schumacher;C. Gould;W. Ossau;L. Molenkamp
我们报告的过程中，使II-VI族半导体外延层从GaAs生长衬底和随后的转移到任意主机环境的去除。该技术结合了机械研磨和层选择性化学湿法蚀刻，并且通常适用于任何II-VI层堆叠。我们证明了非侵入性的方法，通过转移一个全II-VI磁共振隧穿二极管。高分辨率的X射线衍射证明，异质结构的晶体完整性被保留。传输特性证实，器件的功能得到保持，甚至改善，这是由于完全弹性应变弛豫的隧道势垒层。
We report on a process that enables the removal of II–VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II–VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II–VI magnetic resonant tunneling diode. High resolution x-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.