Low field negative magnetoresistance in double layer structures
Low field negative magnetoresistance in double layer structures
复制标题
双层结构中的低场负磁阻
DOI：
10.1103/physrevb.62.17089
复制
发表时间：
2000
影响因子：
3.7
通讯作者：
V.M.Danil'tsev
中科院分区：
文献类型：
--
作者：
G.M.Minkov;A.V.Germanenko;O.E.Rut;O.I.Khrykin;V.I.Shashkin;V.M.Danil'tsev
摘要：对耦合双层结构电导率的弱局域化校正进行了实验和理论研究。闭合路径的统计数据是通过分析垂直和平行于结构平面的磁场的负磁阻的磁场和温度依赖性来确定的。将结果与散射时载流子运动的计算机模拟结果进行比较，表明层间隧道效应在弱局域化中起决定性作用。
Abstract : The weak localization correction to the conductivity in coupled double layer structures was studied both experimentally and theoretically. The statistics of the closed paths was determined from analysis of the magnetic field and temperature dependencies of the negative magnetoresistance for magnetic field perpendicular and parallel to the structure plane. The comparison of the results with the results of computer simulation of carrier motion at scattering shows that inter-layer tunneling plays decisive role in the weak localization.