Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus- doped ZnMgTe layers grown by MOVPE

Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus- doped ZnMgTe layers grown by MOVPE
复制标题

掺杂剂传输速率对 MOVPE 生长的磷掺杂 ZnMgTe 层光致发光和电学性能的影响

DOI:
--
复制
发表时间:
2012
期刊:
physica status solidi (c)
影响因子:
--
通讯作者:
M
M
中科院分区:
--
文献类型:
--
作者:
Saito;K.;Saeki;T.;Tanaka;T.;Guo;Q.X.;Nishio;M

文献摘要

相似文献