Critical adsorption in the undersaturated regime: Scaling and exact results in Ising strips
Critical adsorption in the undersaturated regime: Scaling and exact results in Ising strips
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欠饱和状态下的临界吸附：伊辛带中的缩放和精确结果
DOI：
10.1063/1.476002
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
J. Stecki
中科院分区：
文献类型：
--
作者：
A. Ciach;A. Maciołek;J. Stecki
重新考虑弱表面场 h1 的临界吸附。在物理启发式论证的基础上，推导了缩放函数的近似行为。提出了有限系统中弱 h1 缩放的新形式，并通过针对 2D Ising 条带中为此目的获得的精确结果进行测试进行了验证。对于弱 h1，我们发现在降低温度 h11/Δ1∼τ≪1 下吸附 Γ∼τβ−Δ1 的近似行为。这种行为与实验数据一致[N. S. Desai、S. Peach 和 C. Franck，物理学家。 Rev. E 52, 4129 (1995)] 在 τ=10−5 下获得，并且与 2D Ising 条带中的精确结果非常一致。
Critical adsorption for weak surface field h1 is reconsidered. On the basis of physical heuristic arguments, approximate behavior of the scaling function is derived. New form of a scaling for weak h1 in finite systems is proposed and verified by testing against exact results obtained for this purpose in the 2D Ising strips. For weak h1 we find the approximate behavior of adsorption Γ∼τβ−Δ1 for the reduced temperatures h11/Δ1∼τ≪1. This behavior is consistent with experimental data [N. S. Desai, S. Peach, and C. Franck, Phys. Rev. E 52, 4129 (1995)] obtained for τ=10−5, and is in a very good agreement with exact results in the 2D Ising strip.