High-frequency characterization of on-chip digital interconnects
High-frequency characterization of on-chip digital interconnects
复制标题
片上数字互连的高频特性
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
S. Wong
中科院分区：
文献类型：
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作者：
B. Kleveland;X. Qi;L. Madden;T. Furusawa;R. Dutton;M. Horowitz;S. Wong
随着技术的不断发展，片上电感变得越来越重要。本文描述了一种表征互连中电感效应的方法。它使用现实的测试结构来研究相互耦合对本地互连的影响，对连接到片上驱动器的随机线路的影响，以及对典型的电源和地网的影响。使用S参数来表征电感，可以提取大量的线路，同时只需要对虚拟打开焊盘进行很小的开销测量，以消除测量寄生。它还可以直接提取与频率相关的R、L、G、C参数。结果总结了在很宽的线间距和线宽范围内的电感和电阻的曲线拟合公式。通过对0.25-/spl mu/m技术下典型中继器电路的瞬态分析，说明了频率依赖性的重要性。该模型捕获了提取参数的频率依赖性，可以准确地预测新型电感敏感环形振荡器的性能。
On-chip inductance is becoming increasingly important as technology continues to scale. This paper describes a way to characterize inductive effects in interconnects. It uses realistic test structures that study the effect of mutual couplings to local interconnects, to random lines connected to on-chip drivers, and to typical power and ground grids. The use of S parameters to characterize the inductance allows a large number of lines to be extracted while requiring only a small overhead measurement of dummy open pads to remove measurement parasitics. It also enables direct extraction of the frequency-dependent R, L, G, C parameters. The results are summarized with curve-fitted formulas of inductance and resistance over a wide range of line spacings and line widths. The significance of the frequency dependence is illustrated with transient analysis of a typical repeater circuit in a 0.25-/spl mu/m technology. A model that captures the frequency dependency of the extracted parameters accurately predicts the performance of a new inductance-sensitive ring oscillator.