High-power high-efficiency GaAlAs superluminescent diodes with an internal absorber for lasing suppression
High-power high-efficiency GaAlAs superluminescent diodes with an internal absorber for lasing suppression
复制标题
高功率高效率 GaAlAs 超辐射发光二极管，带有内部吸收器，可抑制激光
DOI：
10.1109/3.17333
复制
发表时间：
1989
影响因子：
2.5
通讯作者：
N. Bar
中科院分区：
文献类型：
--
作者：
N. Kwong;K. Lau;N. Bar
介绍了一种基于内吸收体抑制激光的大功率高效率GaAlAs超辐射发光二极管的工作原理。该吸收体是基于一个未泵浦/反向偏置部分的设备，和超辐射发光二极管的特性在很大程度上取决于偏置条件的吸收体部分。器件的高效率来自于掩埋异质结构的强波导效应。一个理论，准确地描述了各种设备的特性。>
The operation principles of a high-power high-efficiency GaAlAs superluminescent diode based on an internal absorber for lasing suppression is described. The absorber is based on an unpumped/reverse-biased section in the device, and the superluminescent diode characteristic depends heavily on the bias condition of the absorber section. The very high efficiency of the device arises from the strong waveguiding effect of the buried heterostructure. A theory which accurately describes the various device characteristics is described. >