State-of-the-Art Flash Chips for Dosimetry Applications
State-of-the-Art Flash Chips for Dosimetry Applications
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用于剂量测定应用的最先进的闪存芯片
DOI：
10.1109/nsrec.2018.8584286
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
B. Ray
中科院分区：
文献类型：
--
作者：
P. Kumari;Levi Davies;N. Bhat;E. Zhang;M. Mccurdy;D. Fleetwood;B. Ray
在本文中，我们表明，最先进的商业现货闪存芯片技术（20纳米技术节点与多层次单元）是相当敏感的电离辐射。我们发现，在100 rad（SiO2）时，这些Flash芯片中的失败位计数随着伽马或x射线剂量的增加而单调增加。在x射线辐照装置中观察到更多的失效位，很可能是由于高z后端材料的剂量增强效应。这些结果显示了剂量学应用的前景。
In this paper we show that state-of-the-art commercial off-the-shelf Flash memory chip technology (20 nm technology node with multi-level cells) is quite sensitive to ionizing radiation. We find that the fail-bit count in these Flash chips starts to increase monotonically with gamma or X-ray dose at 100 rad(SiO2). Significantly more fail bits are observed in X-ray irradiated devices, most likely due to dose enhancement effects due to high-Z back-end-of-line materials. These results show promise for dosimetry application.