Optoelectronic and material properties of nanocrystal-based CZTSe absorbers with Ag-alloying
Optoelectronic and material properties of nanocrystal-based CZTSe absorbers with Ag-alloying
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DOI：
10.1016/j.solmat.2015.10.039
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发表时间：
2016-02-01
影响因子：
6.9
通讯作者：
Agrawal, Rakesh
中科院分区：
文献类型：
--
作者：
Hages, Charles J.;Koeper, Mark J.;Agrawal, Rakesh
在这项工作中，银合金在锌黄锡矿太阳能电池的好处进行了探讨，在可调的带隙，改善晶粒生长，改善少数载流子寿命，减少缺陷的形成，并减少潜在的波动（Ag，Cu）（2）ZnSnSe 4（ACZTSe）吸收相对于Cu 2 ZnSnSe 4（CZTSe）。增强的光电性能示出在这里与ACZTSe中的Ag合金化的程度成比例。这些效应对器件性能的影响进行了讨论，与ACZTSe（5%-Ag）吸收剂相对于CZTSe吸收剂具有类似的带隙的平均器件性能/开路电压的改善报告。这些初始结果对于Ag合金化ACZTSe材料系统是有希望的，因为Voc限制是锌黄锡矿太阳能电池中的不良器件性能的主要原因，并且阳离子取代提供了一种独特的方法来调整锌黄锡矿吸收剂的缺陷性质。在此，纳米颗粒的合成和大晶粒ACZTSe吸收剂的形成，然后由材料和光电特性。此外，RTP处理，以实现完全硒化的大颗粒硫族化物吸收剂从硫化物的油墨。(C)2015爱思唯尔B. V.保留所有权利。
In this work, the benefits of Ag-alloying in kesterite solar cells are explored in terms of tunable band gap, improved grain growth, improved minority carrier lifetime, reduced defect formation, and reduced potential fluctuations for (Ag,Cu)(2)ZnSnSe4 (ACZTSe) absorbers relative to Cu2ZnSnSe4 (CZTSe). The enhanced optoelectronic properties are shown to scale here with the degree of Ag-alloying in ACZTSe. The impacts of these effects on device performance are discussed, with improvement in average device performance/open-circuit voltage reported for ACZTSe (5%-Ag) absorbers relative to CZTSe absorbers with similar band gap. These initial results are promising for the Ag-alloyed ACZTSe material system as Voc limitations are the primary cause of poor device performance in kesterite solar cells, and cation substitution presents a unique method to tune the defect properties of kesterite absorbers. Herein, nanoparticle synthesis and large-grain ACZTSe absorber formation is described followed by material and optoelectronic characterization. Additionally, RTP processing is presented to achieve fully selenized large-grain chalcogenide absorbers from sulfide nanocrystal inks. (C) 2015 Elsevier B.V. All rights reserved.