Multiple uniform layer approximation in analysis of negative resistance in p-n junction in breakdown
Multiple uniform layer approximation in analysis of negative resistance in p-n junction in breakdown
复制标题
多均匀层近似分析p-n结击穿负阻
DOI：
10.1109/t-ed.1967.16113
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发表时间：
1967
影响因子：
3.1
通讯作者：
T. Misawa
中科院分区：
文献类型：
--
作者：
T. Misawa
提出了一种计算p-n结击穿高频小信号负电阻的简化解析方法。负电阻会导致冲击雪崩传递时间（IMPATT）二极管的微波振荡。该方法是将整个空间电荷区细分为若干均匀层，每一层都有恒定的雪崩乘法（包括零），并将连续层的解析解连接起来（多均匀层近似）。在最简单的近似情况下，只有一个恒定的雪崩区和一个或两个无雪崩漂移区，用于研究小信号特征如何随雪崩区宽度和位置变化。从小信号负Q的表现可以预期，在低偏置电流条件下，当雪崩区变短、其位置从空间电荷区中心向边缘移动、总空间电荷层变宽时，振荡器的性能得到改善。在具有较大电离率的材料中，在较低的击穿电压和偏置电流下获得给定质量(Q)的负电阻。
A simplified analytical method of calculating high-frequency, small signal negative resistance of p-n junctions in breakdown is presented. The negative resistance can lead to microwave oscillations in Impact Avalanche Transit Time (IMPATT) diodes. The method consists in subdividing the entire space charge region into several uniform layers, each of which has constant avalanche multiplication (including zero), and connecting the analytical solutions of the successive layers (multiple uniform layer approximation). The simplest case of the approximation, in which there is only one constant-avalanche region and one or two avalanche-free drift regions, is used to investigate how the small signal characteristics change with width and position of the avalanche region. From the behavior of the small signal negative Q , it is expected that for low bias currents the oscillator performance improves when the avalanche region becomes relatively shorter, when its position moves from the center to the edge of the space charge region, and when the total space charge layer becomes wider. In materials with larger ionization rates, a negative resistance of a given quality ( Q ) is obtained at lower breakdown voltage and bias current.