Strain-engineering of charge transport in the correlated Dirac semimetal of perovskite CaIrO3 thin films
Strain-engineering of charge transport in the correlated Dirac semimetal of perovskite CaIrO3 thin films
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DOI：
10.1063/1.5109582
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发表时间：
2019-08-01
期刊：
影响因子：
6.1
通讯作者：
Tokura, Y.
中科院分区：
文献类型：
--
作者：
Masuko, M.;Fujioka, J.;Tokura, Y.
通过电阻率和光谱测量研究了钙钛矿型CaIrO_3关联狄拉克半金属薄膜中的电荷输运。在应变弛豫薄膜中观察到电子型或空穴型载流子的半金属输运。通过热退火控制应变弛豫，n型和p型样品中的载流子密度都降低了，同时在2 K下电子密度为2.5 x 10（18）cm（-3）时，载流子迁移率提高到160 cm（2）V-1 s（-1）。我们认为，位于费米能级附近的狄拉克线节点的能量随晶格畸变或应变敏感缺陷的性质而变化，从而导致载流子的符号变化以及迁移率的增强。(c)2019年作者。除非另有说明，否则所有文章内容均根据知识共享署名（CC BY）许可证（http：//creativecommons.org/licenses/by/4.0/）进行许可。
We have investigated the charge transport in thin films of correlated Dirac semimetal of perovskite CaIrO3 by measurements of resistivity and optical spectra. The semimetallic transport of either electron-type or hole-type carrier is observed in the strain-relaxed thin films. By controlling the strain relaxation via thermal annealing, the carrier density decreases in both n-type and p-type samples, while enhancing the carrier mobility up to 160 cm(2) V-1 s(-1) at an electron density of 2.5 x 10(18) cm(-3) at 2 K. We propose that the energy of Dirac line node, which locates in proximity to the Fermi level, varies with the lattice distortion or strain-sensitive defect character, causing the sign change in the charge carrier as well as the mobility enhancement. (c) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).