(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films
(Invited) Vacuum Ultraviolet Photochemical Atomic Layer Deposition of Alumina and Titania Films
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（特邀）真空紫外光化学原子层沉积氧化铝和二氧化钛薄膜
DOI：
10.1149/06907.0139ecst
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Chalker P
中科院分区：
文献类型：
--
作者：
Chalker P
传统的原子层沉积（ALD）是一种热化学过程，其中共试剂依次循环脉冲到加热的衬底上。作为基板加热的替代方法，各种形式的其他“非热”ALD工艺正在研究中。本文报道了Al2O3和TiO2薄膜在60℃下的光化学原子层沉积，使用密闭的真空紫外光源激发分子氧作为金属前驱体的助剂。采用原位石英晶体微天平和沉积后椭偏测量法研究了三甲基铝和四异丙醇钛前驱体的生长机制。光化学ALD Al2O3薄膜在辐照区和掩膜区表现出不同的电容等效厚度，即使经过沉积后退火。光化学ALD二氧化钛薄膜是无定形的，当加入Pt/TiO2/Pt金属绝缘体-金属结构时，二氧化钛表现出电阻开关行为。
Conventional atomic layer deposition (ALD) is a thermo-chemical process where co-reagents are sequentially pulsed in cycles onto a heated substrate. As an alternative to substrate heating, various forms of other “non-thermal” ALD processes are being investigated. Herein, the photochemical atomic layer deposition of Al2O3 and TiO2 thin films at 60 C is reported using a shuttered vacuum ultraviolet light source to excite molecular oxygen as a coreagent with the metal precursors. The growth mechanisms using trimethyl aluminium and titanium tetraisopropoxide precursors, are investigated using in-situ quartz crystal microbalance and postdeposition ellipsometric measurements. The photochemical ALD Al2O3 films exhibit different capacitance equivalent thicknesses for irradiated and masked regions respectively, even after postdeposition annealing. The photochemical ALD titania films are amorphous and when incorporated into Pt/TiO2/Pt metalinsulator-metal structures, the titania exhibits a resistive switching behavior.