Thermally induced stress relaxation and densification of spin-on-glass thin films
Thermally induced stress relaxation and densification of spin-on-glass thin films
复制标题
旋涂玻璃薄膜的热致应力松弛和致密化
DOI：
--
复制
发表时间：
2000
期刊：
影响因子：
--
通讯作者：
W. Xia
中科院分区：
文献类型：
--
作者：
C. Chiang;W. Wallace;G. Lynn;D. Feiler;W. Xia
研究了硅晶片上二氧化硅旋涂玻璃薄膜的应力-温度关系。加热后，当薄膜温度高于 340°C 时，应力-温度曲线显示斜率急剧增加。在 450°C 时，观察到薄膜应力发生显着的、不可逆的变化。这种应力的变化与薄膜电子密度的增加和薄膜厚度的减少相关。观察到的热激活应力松弛行为可以根据玻璃态氢-倍半硅氧烷材料的回流来解释。
The stress–temperature relationship of silica spin-on-glass thin films on silicon wafers was studied. Upon heating, the stress–temperature curves showed a dramatically increasing slope when the temperature of the film was greater than 340 °C. At 450 °C, a significant, irreversible change in the stress of the film was observed. This change in stress was correlated with an increase in film electron density and a decrease in film thickness. The observed thermally activated stress–relaxation behavior was interpreted in terms of reflow of the glassy hydrogen–silsesquioxane-based material.