Electrical and Optical Properties of Epitaxial Films of PbS, PbSe, PbTe, and SnTe
Electrical and Optical Properties of Epitaxial Films of PbS, PbSe, PbTe, and SnTe
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DOI：
10.1103/physrev.140.a330
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发表时间：
1965-10
期刊：
影响因子：
--
通讯作者：
J. Zemel;J. D. Jensen;R. Schoolar
中科院分区：
文献类型：
--
作者：
J. Zemel;J. D. Jensen;R. Schoolar
在加热的碱金属卤化物衬底上生长了PbS、PbTe、PbSe和SnTe单晶薄膜。在77 K和300 K之间的迁移率，霍尔系数和电阻率的温度依赖性和样品取向和磁场强度在77 K的磁阻的依赖关系进行了研究。在2.0- 15.0-μ范围内用干涉法测量的折射率的分析得出了光学介电常数和作为温度函数的直接能隙。这些研究表明，单晶薄膜的电学和光学性能与块状材料中的性能相当。膜的形成和应变现象的讨论，并与实验结果进行了比较。这些材料的一些局限性进行了讨论，特别强调的作用的膜的结构上的电性能。
Single-crystal films of PbS, PbTe, PbSe, and SnTe have been grown on heated alkali-halide substrates. The temperature dependence of the mobility, Hall coefficient, and resistivity between 77 K and 300 K and the dependence of the magnetoresistance upon sample orientation and magnetic field strength at 77 K have been studied. Analysis of the refractive indices, measured interferometrically in the 2.0-to 15.0-μ region, has yielded optical dielectric constants and the direct energy gaps as functions of temperature. These studies indicate that the single-crystal films have electrical and optical properties comparable to those found in bulk material. Discussions of film formation and strain phenomena are presented and compared with the experimental results. Some of the limitations of these materials are discussed with particular emphasis on the role of structure of the films on the electrical properties.