Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)
Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)
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DOI：
10.1109/ted.2004.841358
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发表时间：
2005
影响因子：
3.1
通讯作者：
T. Kimoto;Hajime Kosugi;J. Suda;Y. Kanzaki;H. Matsunami
中科院分区：
文献类型：
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作者：
T. Kimoto;Hajime Kosugi;J. Suda;Y. Kanzaki;H. Matsunami
研究了横向SiC还原表面场效应管的设计和制造。通过器件模拟，优化了漏极区和轻掺杂漏极区的掺杂浓度（剂量），以减少漏极边缘或栅氧化区的电场拥挤。最佳氧化条件取决于多型：对于4H-SiC，在1300/spl℃下的N/sub - 2/O氧化似乎是合适的，对于6H-SiC，在1250/spl℃下的O/sub - 2/干氧化似乎是合适的。4H-SiC（0001）、（112~0）和6H-SiC(0001) mosfet的平均反转沟道迁移率分别为22、78和68 cm/sup 2/ Vs。在10-/spl mu/m厚的p型4H-SiC(0001),（112~0）和6H-SiC（0001）薄膜上制备了RESURF mosfet，受体浓度为1/spl倍/10/sup， 16/ cm/sup -3/ sup。通道长度为3-/spl mu/m的6H-SiC(0001) RESURF MOSFET的击穿电压高达1620 V，导通电阻为234 m/spl ω //spl middot/cm/sup 2/。4H-SiC(112~0) RESURF MOSFET的特性为1230 V-138 m/spl ω //spl middot/cm/sup 2/。
Design and fabrication of lateral SiC reduced surface field (RESURF) MOSFETs have been investigated. The doping concentration (dose) of the RESURF and lightly doped drain regions has been optimized to reduce the electric field crowding at the drain edge or in the gate oxide by using device simulation. The optimum oxidation condition depends on the polytype: N/sub 2/O oxidation at 1300/spl deg/C seems to be suitable for 4H-SiC, and dry O/sub 2/ oxidation at 1250/spl deg/C for 6H-SiC. The average inversion-channel mobility is 22, 78, and 68 cm/sup 2//Vs for 4H-SiC(0001), (112~0), and 6H-SiC(0001) MOSFETs, respectively. RESURF MOSFETs have been fabricated on 10-/spl mu/m-thick p-type 4H-SiC(0001), (112~0), and 6H-SiC(0001) epilayers with an acceptor concentration of 1/spl times/10/sup 16/ cm/sup -3/. A 6H-SiC(0001) RESURF MOSFET with a 3-/spl mu/m channel length exhibits a high breakdown voltage of 1620 V and an on-resistance of 234 m/spl Omega//spl middot/cm/sup 2/. A 4H-SiC(112~0) RESURF MOSFET shows the characteristics of 1230 V-138 m/spl Omega//spl middot/cm/sup 2/.