Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS
Er3+ INFRARED PHOTO- AND ELECTRO-LUMINESCENCE FROM Er-DOPED Si-RICH SILICON NITRIDE FILMS WITH VARYING Si AND Er CONTENTS
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DOI：
10.1142/s1793604711002019
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发表时间：
2011-09
影响因子：
1.3
通讯作者：
Yangzhi Yin;Wanjin Xu;G. Ran;G. Qin;Bin Zhang
中科院分区：
文献类型：
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作者：
Yangzhi Yin;Wanjin Xu;G. Ran;G. Qin;Bin Zhang
Both Er-doped Si-rich silicon nitride (Er:Si3(1+x)N4) films and electroluminescence (EL) devices with structure of indium tin oxide/Er:Si3(1+x)N4/p-Si with varying Si and Er contents have been fabricated by reactive magnetron sputtering technique. We have investigated the effects of the excess Si content in a wide range (x from 0 to 2.1) on the Er3+ 1.54 μm photoluminescence (PL), EL and the electrical transport of the Er:Si3(1+x)N4 films. It is found that the Er3+ 1.54 μm PL intensity of the Er:Si3(1+x)N4 films and the EL power efficiency of the Er:Si3(1+x)N4 devices exhibit strong dependences on x and are enhanced by one to two orders of magnitude around x = 0.27 and x = 0.53, respectively. The Er concentration also has a great influence on both Er3+ 1.54 μm PL and EL of the Er:Si3(1+x)N4 films. The optimum Er concentrations for PL and EL in the Er:Si3(1+x)N4 films with x = 0.53 are both ~3 at.%.
