Exciton dispersion in silicon nanostructures formed by intense, ultra-fast electronic excitation
Exciton dispersion in silicon nanostructures formed by intense, ultra-fast electronic excitation
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由强烈、超快的电子激发形成的硅纳米结构中的激子色散
DOI：
10.1007/s00339-002-1814-9
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
D. Schneider
中科院分区：
文献类型：
--
作者：
A. Hamza;M. W. Newman;P. Thielen;H.W.H. Lee;T. Schenkel;J. Mcdonald;D. Schneider
清洁的硅(10 0)-(2×1)表面强烈的超快电子激发导致硅纳米结构的形成，该结构在黄绿色(∼2-eV带隙)处发光。用慢速、高电荷态离子(如Xe44+和Au53+)辐照硅表面，产生超快电子激发。最近报道了从这些纳米结构中观察到的发光中的激子特征。本文报道了激子特性随激光激发能量的色散。提出了声子散射过程来解释观察到的色散。
The intense, ultra-fast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminesce in the yellow-green (∼2-eV band gap). The silicon surfaces were irradiated with slow, highly charged ions (e.g. Xe44+and Au53+) to produce the ultra-fast electronic excitation. The observation of excitonic features in the luminescence from these nanostructures has recently been reported. In this paper we report the dispersion of the excitonic features with laser excitation energy. A phonon-scattering process is proposed to explain the observed dispersion.