Three Fingerprints of Memristor
Three Fingerprints of Memristor
复制标题
DOI：
10.1109/tcsi.2013.2256171
复制
发表时间：
2013-11-01
影响因子：
5.1
通讯作者：
Chua, Leon O.
中科院分区：
文献类型：
--
作者：
Adhikari, Shyam Prasad;Sah, Maheshwar Pd;Chua, Leon O.
本文说明了一个器件作为忆阻器，它应该表现出三个特征指纹：1)当由双极周期信号驱动时，该器件必须在电压-电流平面上表现出“夹紧滞回线”，假设响应是周期性的。2)从某个临界频率开始，滞回瓣面积随着激励频率的增加而单调减小；3)当频率趋于无穷大时，缩紧滞回线收缩为单值函数。还提出了显示这三种指纹的忆阻器的示例，以及仅显示这些指纹的子集的非忆阻器。此外，两种不同类型的缩紧磁滞回线；还讨论了忆阻器所表现出的横向（自交）和非横向（切向）回路及其识别准则。
This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a "pinched hysteresis loop" in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.