Li1.1(Zn1−xCrx)As: Cr doped I–II–V diluted magnetic semiconductors in bulk form
Li1.1(Zn1−xCrx)As: Cr doped I–II–V diluted magnetic semiconductors in bulk form
复制标题
DOI：
10.1063/1.4867299
复制
发表时间：
2014-02
影响因子：
3.2
通讯作者：
Quan Wang;H. Man;C. Ding;X. Gong;Shengli Guo;H. Jin;Hangdong Wang;Bin Chen;F. Ning
中科院分区：
文献类型：
--
作者：
Quan Wang;H. Man;C. Ding;X. Gong;Shengli Guo;H. Jin;Hangdong Wang;Bin Chen;F. Ning
本文报道了体相稀磁半导体I-II-V Li1.1（Zn 1 −xCrx）As（x = 0.03，0.05，0.10，0.15）的合成和表征，其立方晶体结构与III-V GaAs和II-VI Zn-Crx ZnSe相同。当p型载流子由过量的Li产生时，用10%的Cr取代Zn导致在低于TC = 218 K的铁磁有序。Li（Zn，Cr）As代表另一种磁性半导体系统，其具有使载流子和自旋去耦的优点，其中载流子通过添加额外的Li来产生，并且自旋通过Cr取代Zn来引入。
We report the synthesis and characterization of bulk form diluted magnetic semiconductors I–II–V Li1.1(Zn1−xCrx)As (x = 0.03, 0.05, 0.10, 0.15) with a cubic crystal structure identical to that of III–V GaAs and II–VI zinc-blende ZnSe. With p-type carriers created by excess Li, 10% Cr substitution for Zn results in a ferromagnetic ordering below TC ∼ 218 K. Li(Zn,Cr)As represents another magnetic semiconducting system with the advantage of decoupling carriers and spins, where carriers are created by adding extra Li and spins are introduced by Cr substitution for Zn.