Device model approximation using 2N trees
Device model approximation using 2N trees
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DOI：
10.1109/43.45854
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发表时间：
1990
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影响因子：
--
通讯作者：
D. Lewis
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文献类型：
--
作者：
D. Lewis
描述了2/supN/树在器件模型逼近中的应用。使用2/sup N/树划分器件模型函数的域，其中函数更非线性的分区更小。与每个分区的每个角相关联的函数值是预先计算的，并且通过在包括给定点的最小分区上进行插值来对该函数进行评估。这种技术的优点是，高度非线性的功能，可以与适度的空间和时间要求建模。指数函数，如FET的亚阈值行为，可以准确地建模。在低至10/sup-11/ A的电流下，精度水平可达1%。表生成时间很短;对于包括亚阈值效应的MOSFET模型，只有几分钟。该算法特别适用于硬件加速器件模型评估器。一个原型，能够执行一个SPICE级-2模型，包括亚阈值效应在1 μ s的器件模型评估的设计进行说明。不太详细的模型，如时序模拟器模型，可以在0.2 μ s内进行评估。>
The application of 2/sup N/ trees to device model approximation is described. The domain of the device model function is partitioned using a 2/sup N/ tree, with smaller partitions where the function is more nonlinear. The function value associated with each corner of each partition is precomputed, and the function is evaluated by a given point by interpolation over the smallest partition that includes that point. This technique has the advantage that highly nonlinear functions can be modeled with modest space and time requirements. Exponential functions, such as the subthreshold behavior of FETs, can be accurately modeled. Accuracy levels of 1% are possible down to currents of 10/sup -11/ A. Table generation time is small; it is only a few minutes for a MOSFET model including subthreshold effects. This algorithm is especially suited for application to a hardware-accelerated device model evaluator. The design of a prototype that is capable of performing a device model evaluation of a SPICE level-2 model including subthreshold effects in 1 mu s is described. Less detailed models, such as timing simulator models, can be evaluated in as little as 0.2 mu s. >