Gallium oxide nanoribbons and nanosheets
Gallium oxide nanoribbons and nanosheets
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DOI：
10.1021/jp013228x
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发表时间：
2002-02-07
影响因子：
3.3
通讯作者：
Wang, ZL
中科院分区：
文献类型：
--
作者：
Dai, ZR;Pan, ZW;Wang, ZL
采用高温蒸发法在氧气存在下合成了Ga 2 O3纳米带和纳米片。所合成的纳米带和纳米片是纯的，结构均匀，单晶，并且没有位错。纳米带和纳米片都具有单斜β-Ga 2 O 3结构。纳米带和纳米片的平坦顶表面和底表面均为（100），纳米带的侧表面为+/-（010）和+/-（10（1）条上），纳米片的侧表面为+/-（010）、+/-（10（1）条上）和+/-（21（2）条上）。纳米晶生长的轴向为沿着[001]或[010]。
Nanoribbons and flat nanosheets of Ga2O3 have been synthesized by evaporating GaN at high temperature with the presence of oxygen. The as-synthesized nanoribbons and nanosheets are pure, structurally uniform, single crystalline, and free from dislocations. The nanoribbons and the nanosheets all have monoclinic beta-Ga2O3 structure. The flat top and bottom surfaces for both nanoribbons and nanosheets are ( 100), the side surfaces are +/-(010) and +/-(10 (1) over bar) for nanoribbons and +/-(010), +/-(10 (1) over bar) and +/-(21 (2) over bar) for nanosheets. The axis direction of nanoribbon growth is along either [001] or [010].