Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy
Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy
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DOI：
10.1002/crat.201400468
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发表时间：
2015-06
影响因子：
1.5
通讯作者：
V. Garbe;B. Abendroth;H. Stöcker;A. Gavrilov;D. Cohen-Elias;S. Mehari;D. Ritter;D. Meyer
中科院分区：
文献类型：
--
作者：
V. Garbe;B. Abendroth;H. Stöcker;A. Gavrilov;D. Cohen-Elias;S. Mehari;D. Ritter;D. Meyer
对市售的氢化物气相外延氮化镓（GaN）进行了表征，目的是将氮化镓晶圆的氧和氢二次离子质谱谱图与样品的电学性质联系起来。利用电学（电容-电压，霍尔），结构（高分辨率X射线衍射）和光学（偏振红外光谱）方法，推导了包括掺杂谱和迁移率在内的氮化镓层模型。在氮化镓的氢化物气相外延生长过程中，氧和氢极易掺入。氧是氮化镓中的n型掺杂剂，而氢可以钝化一些供体。电学和光学性质与低缺陷浓度的氮化镓顶层和高缺陷浓度的氮化镓中间层有关。
Commercially available hydride vapor phase epitaxy gallium nitride (GaN) is characterized with the aim to correlate the oxygen and hydrogen secondary ion mass spectrometry profiles of a GaN wafer with the electrical properties of the sample. A GaN layer model, including doping profile and mobility, is derived, utilizing electrical (capacitance–voltage, Hall), structural (high resolution X‐ray diffraction) and optical (polarized infrared spectroscopy) methods. Oxygen and hydrogen are easily incorporated during hydride vapor phase epitaxy growth of GaN. Oxygen is an n‐type dopant in GaN, whereas hydrogen may passivate some of the donors. Electrical and optical properties correlate with a low defect concentration top GaN layer and a high defect concentration GaN interlayer.