Ultralow Contact Resistivity of Cu/Au With $p$ -Type ZnS Nanoribbons for Nanoelectronic Applications
Ultralow Contact Resistivity of Cu/Au With $p$ -Type ZnS Nanoribbons for Nanoelectronic Applications
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DOI：
10.1109/led.2013.2258319
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发表时间：
2013-05
影响因子：
4.9
通讯作者：
Yongqiang Yu;Longhui Zeng;Yang Jiang;J. Jie
中科院分区：
文献类型：
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作者：
Yongqiang Yu;Longhui Zeng;Yang Jiang;J. Jie
在这里，我们报告了一种新的金属化方案，用于在室温下实现与p型II-VI纳米结构的良好欧姆接触。由Cu（4 nm）/Au（50 nm）组成的双层电极与p-ZnS纳米带（NR）的接触电阻率低至5.6 × 10-7 Ω cm 2。通过深度剖面X射线光电子能谱，俄歇电子能谱和高分辨率透射电子显微镜的界面分析表明，形成了一个高导电性的Cu 2S界面层，它可以作为缓冲层，从而促进空穴传输从NR到电极。基于Cu/Au欧姆接触制备了高性能Ti/p-ZnS NR肖特基势垒二极管。
Here, we report a new metallization scheme for achieving excellent ohmic contact to p-type II-VI nanostructures at room temperature. Bilayer electrodes consisting of Cu (4 nm)/Au (50 nm) provided a specific contact resistivity as low as 5.6 × 10-7 Ω cm2 with p-ZnS nanoribbons (NRs). Interface analysis via depth profiling X-ray photoemission spectroscopy, Auger electron spectroscopy, and high-resolution transmission electron microscopy revealed the formation of a highly conductive Cu2S interfacial layer, which could serve as the buffer layer and thus promote the hole transport from NR to electrode. High-performance Ti/p-ZnS NR Schottky barrier diodes were then fabricated based on the Cu/Au ohmic contact.