MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates
MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates
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DOI：
10.1088/0022-3727/40/21/031
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发表时间：
2007-11
期刊：
影响因子：
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通讯作者：
R. Hao;Ying-qiang Xu;Zhiqiang Zhou;Z. Ren;H. Ni;Zhenhong He;Zhichuan Niu
中科院分区：
文献类型：
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作者：
R. Hao;Ying-qiang Xu;Zhiqiang Zhou;Z. Ren;H. Ni;Zhenhong He;Zhichuan Niu
首先，采用分子束外延技术在(001)面上生长GaSb外延层。我们用原子力显微镜确定GaSb层具有非常光滑的表面。然后，在GaSb缓冲层上生长了非常短周期的InAs/GaSb超晶格。用低温光致发光光谱和高分辨电子显微镜研究了超晶格的光学和晶体性质。为了确定SLS的界面，在室温下对样品进行了拉曼散射光谱测试。结果表明，具有清晰界面和积分周期的SLS的峰值波长在2.0~2.6µm之间，InAs和GaSb之间的SL界面是类InSb的。
First, GaSb epilayers were grown on (0 0 1)GaAs substrates by molecular beam epitaxy. We determined that the GaSb layers had very smooth surfaces using atomic force microscopy. Then, very short period InAs/GaSb superlattices (SLs) were grown on the GaSb buffer layer. The optical and crystalline properties of the superlattices were studied by low-temperature photoluminescence spectra and high resolution transition electron microscopy. In order to determine the interface of SLs, the samples were tested by Raman-scattering spectra at room temperature. Results indicated that the peak wavelength of SLs with clear interfaces and integrated periods is between 2.0 and 2.6 µm. The SL interface between InAs and GaSb is InSb-like.