122 GHz transmitter using frequency doublers

122 GHz transmitter using frequency doublers
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使用倍频器的 122 GHz 发射机

DOI:
10.1109/sirf.2011.5719319
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发表时间:
2011
期刊:
2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
影响因子:
--
通讯作者:
S. Glisic
S. Glisic
中科院分区:
--
文献类型:
--
作者:
N. Sarmah;K. Schmalz;W. Winkler;C. Scheytt;S. Glisic

文献摘要

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在这项工作中,使用倍频器的122 GHz发射机电路是在0.13 µm SiGe:C BiCMOS技术实现的,f<inf>T</inf>/f<inf>最大值</inf>为250/315 GHz。实现了两种基于共源共栅晶体管平衡拓扑结构的倍频器。在基本版本中,峰值转换增益为−9 dB,输出功率为−6 dBm。在改进版本中,通过使用开路短截线作为二次谐波反射器,峰值转换增益提高到−6 dB,峰值输出功率为−3 dBm。发射机是通过将工作频率为59-62 GHz的VCO与倍频器的基本版本相结合来实现的。在118-122 GHz的输出频率范围内,发射机输出功率为−3.5至−5.5 dBm。
In this work, a 122 GHz transmitter circuit using frequency doublers is realized in 0.13 µm SiGe:C BiCMOS technology with f<inf>T</inf>/f<inf>max</inf> of 250/315 GHz. Two versions of the frequency doubler based on the balanced topology with cascode transistor are implemented. In the basic version, the peak conversion gain was −9 dB with −6 dBm output power. In the improved version the peak conversion gain is improved to −6 dB with −3 dBm peak output power by using open stubs as second harmonic reflectors. A transmitter is realized by combining a VCO working from 59–62 GHz with the basic version of the doubler. The transmitter output power is from −3.5 to −5.5 dBm in the output frequency range of 118–122 GHz.