Composition dependence of the hole mobility in GasbxAs1-x
Composition dependence of the hole mobility in GasbxAs1-x
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DOI：
10.1063/1.2912534
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发表时间：
2008-04
影响因子：
4
通讯作者：
K. Alberi;O. Dubon;W. Walukiewicz;K. Yu;J. Gupta;J. Baribeau
中科院分区：
文献类型：
--
作者：
K. Alberi;O. Dubon;W. Walukiewicz;K. Yu;J. Gupta;J. Baribeau
在重p型掺杂的稀GaSbxAs1−x合金中观察到的异常低的空穴迁移率可以在价带反交叉模型的背景下得到解释。 Sb 原子的局域 p 态与 GaAs 主体的扩展态之间的反交叉相互作用导致价带结构的显着重构，并通过富砷合金中的态展宽效应大大增强空穴的散射。这些结果表明迁移率下降本质上是基本的，并表明价带反交叉模型能够描述高度失配合金的电子传输特性。
The unusually low hole mobility observed in heavily p-type doped dilute GaSbxAs1−x alloys is explained in the context of the valence band anticrossing model. The anticrossing interaction between the localized p-states of the Sb atoms and the extended states of the GaAs host leads to a significant reconfiguration of the valence band structure and results in a greatly enhanced scattering of holes by state broadening effects in As-rich alloys. These results suggest that the mobility drop is fundamental in nature and indicate that the valence band anticrossing model is capable of describing the electronic transport properties of highly mismatched alloys.