PbS/IGZO hybrid structure photo-field-effect transistor with high performance
PbS/IGZO hybrid structure photo-field-effect transistor with high performance
复制标题
高性能PbS/IGZO混合结构光电场效应晶体管
DOI：
10.1049/mnl.2018.5249
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发表时间：
2018
影响因子：
1.3
通讯作者：
Ling Li
中科院分区：
文献类型：
--
作者：
Ying Meng;Jiawei Wang;Anjie Ming;Yinghui Wang;Xuewen Shi;Molin Li;Weibing Wang;Ling Li
为了优化光电场效应晶体管的性能，开发了背栅混合结构。在这种混合型光电晶体管中，硫化铅（PbS）薄膜是用物理气相沉积法制备的。通过控制PbS粉末的沉积速率和沉积时间，获得了不连续、均匀的PbS薄膜。使用具有高迁移率的非晶铟镓锌氧化物（IGZO）作为有源层。在本工作中，混合结构光电晶体管表现出了优异的性能：器件迁移率（μ）达到8.7 cm ~ 2 V-1 s-1，响应度在可见光谱和近红外光谱分别达到2.7 × 104 A/W和5.7 A/W。此外，晶体管的探测率高达2.79 × 1013 cmHz 1/2 W −1。该器件具有理想二极管的特性：饱和电流为0.422nA，响应度为10.74A/W。简化的制造工艺有效地降低了制造器件的成本，并提供了更好的器件稳定性。
To optimise the performance of photo‐field‐effect transistor, a back‐gate hybrid structure was developed. In this hybrid phototransistor, lead sulphide (PbS) thin film was prepared using physical vapour deposition as a photosensitive layer. Discontinuous and uniform PbS film was obtained by controlling the deposition rate and time of PbS powders. Amorphous indium gallium zinc oxide (IGZO) with high mobility was used as an active layer. In this work, The hybrid structure phototransistor shows an excellent performance: device mobility (μ) reach 8.7 cm2V−1s−1, and responsivity achieve 2.7 × 104A/W in visible spectrum and 5.7 A/W in near‐infrared spectrum, respectively. Furthermore, the transistor exhibits detectivity up to 2.79 × 1013cmHz1/2W−1. The device also exhibits characteristics of the ideal diode: the saturation current of the diode is as small as 0.422 nA, and the responsivity of diode is ∼0.74 A/W. Simplified manufacturing processes effectively reduce the cost of fabricated device and provide better device stability.