Low Temperature Growth GaAs on Ge
Low Temperature Growth GaAs on Ge
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DOI：
10.1143/jjap.44.7777
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发表时间：
2005-11
影响因子：
1.5
通讯作者：
L. Knuuttila;A. Lankinen;J. Likonen;H. Lipsanen;X. Lu;P. McNally;J. Riikonen;T. Tuomi
中科院分区：
文献类型：
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作者：
L. Knuuttila;A. Lankinen;J. Likonen;H. Lipsanen;X. Lu;P. McNally;J. Riikonen;T. Tuomi
本文研究了用金属有机物气相外延法在Ge衬底上低温生长GaAs外延层。实验表明，530°C的生长温度和3.5的V/III比导致光滑的GaAs表面。原子力显微镜照片没有显示任何反相边界上生长的GaAs表面上的取向不良的衬底。X射线衍射曲线表明，随着生长温度的降低，层倾斜减小。同步辐射X射线形貌显示非常低的线程位错密度为300 cm-2的GaAs外延层。此外，未观察到失配位错。如果在低温下沉积单层，则二次离子质谱法显示砷扩散到Ge中显著减少。当在初始低温层的顶部上以较高温度沉积附加层时，发现深度浓度依赖的砷扩散显著增加。
In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530°C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm-2 for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.