C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands
C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands
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在 200 GHz 和 300 GHz 频段使用 p -p-n 硅 IMPATT 二极管进行连续振荡
DOI：
10.1049/el:19760115
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发表时间：
1976
影响因子：
1.1
通讯作者：
M. Ohmori
中科院分区：
文献类型：
--
作者：
M. Ino;T. Ishibashi;M. Ohmori
亚毫米波硅单漂移区雪崩二极管与p+？是吗？用离子注入法制备了n+结构。C.W.在285 GHz和185 GHz处获得了7.5 mW和78 mW的输出功率。最大C. W观察到的振荡频率为394 GHz。
Submillimetre-wave silicon single-drift-region IMPATT diodes with a p+?p?n+ structure have been fabricated by ion implantation. C.W. output powers of 7.5 mW at 285 GHz and 78 mW at 185 GHz were obtained. The maximum c.w. oscillation frequency observed was 394 GHz.