Anomalous Hall effect in the Co-based Heusler compounds Co2FeSi and Co2FeAl
Anomalous Hall effect in the Co-based Heusler compounds Co2FeSi and Co2FeAl
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DOI:
10.1063/1.3678323
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发表时间:
2012-04-01
影响因子:
3.2
通讯作者:
Thomas, A.
中科院分区:
文献类型:
--
作者:
Imort, I. -M.;Thomas, P.;Thomas, A.
The anomalous Hall effect (AHE) in the Heusler compounds Co2FeSi and Co2FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity rho(xx) as well as the anomalous Hall resistivity rho(ahe). Analyzing the scaling behavior of rho(ahe) in terms of rho(xx) points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds. (C) 2012 American Institute of Physics. [doi:10.1063/1.3678323]