Ultrafast relaxation of photoexcited holes in n-doped III-V compounds studied by femtosecond luminescence.
Ultrafast relaxation of photoexcited holes in n-doped III-V compounds studied by femtosecond luminescence.
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通过飞秒发光研究 n 掺杂 III-V 化合物中光生空穴的超快弛豫。
DOI：
10.1103/physrevb.45.3886
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
Kurz
中科院分区：
文献类型：
--
作者：
Zhou;Leo;Kurz
我们提出了 n 掺杂 GaAs 和 InP 中光生空穴弛豫的时间分辨测量，时间分辨率为 100 fs。当光激发密度远低于掺杂密度时，带边发光主要由空穴动力学控制。通过改变掺杂密度可以获得有关电子-空穴散射和空穴-声子散射速率的信息。发现热空穴和晶格之间的热平衡是在亚皮秒时间尺度上建立的。
We present time-resolved measurements of the relaxation of photoexcited holes in n-doped GaAs and InP with 100 fs time resolution. The band-edge luminescence is predominantly controlled by the hole dynamics, when the optical excitation density is much lower than the doping density. Information on the electron-hole scattering and hole-phonon scattering rates is obtained by varying the doping density. Thermal equilibrium between hot holes and lattice is found to be established on a subpicosecond time scale.