Magnetic phase transitions in Ta/CoFeB/MgO multilayers
Magnetic phase transitions in Ta/CoFeB/MgO multilayers
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DOI：
10.1063/1.4921306
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发表时间：
2015-04
影响因子：
4
通讯作者：
I. Barsukov;Yu Fu;C. Safranski;Y. Chen;B. Youngblood;A. Gonccalves;M. Spasova;M. Farle;J. Katine;C. Kuo;I. Krivorotov
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文献类型：
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作者：
I. Barsukov;Yu Fu;C. Safranski;Y. Chen;B. Youngblood;A. Gonccalves;M. Spasova;M. Farle;J. Katine;C. Kuo;I. Krivorotov
通过电输运和磁强计测量，研究了基于Ta/Co20Fe60B20/MgO多层膜的薄膜和磁性隧道结纳米柱。这些测量结果表明，在Co20Fe60B20/MgO界面处形成了超薄磁性氧化层。在大约160 K时，氧化物经历了从低温绝缘反铁磁体到高温导电弱铁磁体的相变。这种界面磁性氧化物有望对用于自旋转矩存储器的cofeb基多层材料的磁性能产生重大影响。
We study thin films and magnetic tunnel junction nanopillars based on Ta/Co20Fe60B20/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer forms at the Co20Fe60B20/MgO interface. At approximately 160 K, the oxide undergoes a phase transition from an insulating antiferromagnet at low temperatures to a conductive weak ferromagnet at high temperatures. This interfacial magnetic oxide is expected to have significant impact on the magnetic properties of CoFeB-based multilayers used in spin torque memories.