Dislocation imaging for electronics application crystal selection
Dislocation imaging for electronics application crystal selection
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用于电子应用晶体选择的位错成像
DOI：
10.1002/pssa.200776331
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
A. Gicquel
中科院分区：
文献类型：
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作者：
A. Secroun;O. Brinza;A. Tardieu;J. Achard;F. Silva;X. Bonnin;K. De Corte;A. Anthonis;M. Newton;J. Ristein;P. Geithner;A. Gicquel
高功率电子器件是当今对大带隙材料的真实的挑战。像开关这样简单的器件必须在更高的功率下工作，并要求材料具有特殊的性能：特别是高击穿电压（至少106 V/cm），高迁移率-寿命积（至少10-3 cm 2/V）和相对快速的响应。就金刚石而言，只有质量非常好的厚（100 µm）单晶自支撑薄膜才有望满足这些要求。今天的生长技术仍然会在晶体中产生许多缺陷，这些缺陷可能会使晶体的电性能恶化。因此，我们关心的是确定涉及哪些缺陷，并找到一种策略，以选择最适合我们的电源开关应用的性能薄膜。在这里，它表明，氮杂质是一个主要的缺陷，控制电性能，只要1 ppb的薄膜中包含，并且，对于较低的值，位错似乎发挥作用。此外，它表明，衬底的选择参与在生长的薄膜中的这些位错的形成。（© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
High power electronics are today a real challenge for large band gap materials. Devices as simple as switches have to work at ever higher powers and demand material with exceptional properties: in particular, a high breakdown voltage (at least a few 106 V/cm), a high mobility‐lifetime product (at least 10–3 cm2/V), and a relatively fast response. As far as diamond is concerned, only thick (100 µm) monocrystalline free‐standing films of very good quality are expected to fulfill these requirements. Today's growth techniques still create many defects within the crystal that may deteriorate its electrical properties. It is thus our concern to identify which defects are involved and to find a strategy to select films with properties best suited for our power switching applications. Here, it is shown that nitrogen impurities are one major defect that control electrical properties as soon as 1 ppb is contained in the film and that, for lower values, dislocations seem to play a role. Besides, it is shown that the choice of substrate is involved in the formation of those dislocations within the grown film. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)