Complementary Charge Trapping and Ionic Migration in Resistive Switching of Rare-Earth Manganite TbMnO3
Complementary Charge Trapping and Ionic Migration in Resistive Switching of Rare-Earth Manganite TbMnO3
复制标题
稀土锰矿 TbMnO3 电阻开关中的互补电荷捕获和离子迁移
DOI：
10.1021/am301769f
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发表时间：
2013-02-27
影响因子：
9.5
通讯作者：
Wu, Tom
中科院分区：
文献类型：
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作者：
Cui, Yimin;Peng, Haiyang;Wu, Tom
像TbMnO_3这样的钙钛矿型稀土锰氧化物具有丰富的磁相和电相，为下一代多功能器件提供了机会。在这里，我们报道了在导电的Nb：SrTiO_3衬底上生长的TbMnO_3薄膜的电阻和电容的非挥发性双极开关。该器件的通断电阻比接近1×10(4)，并且阻性开关伴随着频率相关的电容开关。对导电机制的详细分析表明，氧空位的迁移和异质结界面处的电荷捕获/脱陷在开关行为中起着重要的互补作用。我们的结果表明，为了阐明这种由复合氧化物构成的异质结中的导电机制和开关行为，应该同时考虑电子和离子过程。
Perovskite rare-earth manganites like TbMnO3 exhibit rich magnetic and electric phases, providing opportunities for next-generation multifunctional devices. Here, we report the nonvolatile bipolar switching of resistance and capacitance in TbMnO3 thin films grown on conducting Nb:SrTiO3 substrates. The device shows an ON/OFF resistance ratio of similar to 1 x 10(4), and the resistive switching is accompanied by a frequency-dependent capacitance switching. Detailed analysis of the conduction mechanisms reveals that the migration of oxygen vacancies and the charge trapping/detrapping at the heterojunction interface play important and complementary roles in the switching behaviors. Our results suggest that both electronic and ionic processes should be considered in order to elucidate the conduction mechanisms and the switching behaviors in such heterostructures made of complex oxides.