Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators

Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators
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DOI：
10.1021/acs.jpcc.9b00152
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发表时间：
2019-02
期刊：
The Journal of Physical Chemistry C
影响因子：
--
通讯作者：
Y. Guo;H. Li;S. J. Clark;J. Robertson
Y. Guo;H. Li;S. J. Clark;J. Robertson
中科院分区：
其他
文献类型：
--
作者：
Y. Guo;H. Li;S. J. Clark;J. Robertson

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三维键合半导体异质结的带偏移位于两个极限之间，即电子亲和规则（未钉住的极限）和电荷中性的匹配。
The band offsets of heterojunctions of three-dimensionally (3D) bonded semiconductors lie between two limits, the electron affinity rule (unpinned limit) and the matching of the charge neutrality l...