Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon

Ultrahigh-frequency surface acoustic wave generation for acoustic charge transport in silicon
复制标题

用于硅中声电荷传输的超高频表面声波产生

DOI：
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发表时间：
2013
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通讯作者：
W. G. Wiel
W. G. Wiel
中科院分区：
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文献类型：
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作者：
S. Büyükköse;B. Vratzov;J. V. D. Veen;P. V. Santos;W. G. Wiel

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我们展示了压电发电的超高频表面声波在硅基板上，使用高分辨率的紫外线为基础的纳米压印光刻，氢硅倍半氧烷平面化，和金属剥离。叉指换能器上制作的ZnO层夹在两个SiO2层的顶部上的Si衬底。激发模式高达23.5 GHz的观察。压电场的深度分布计算表明，这种多层结构是适合于在硅中的声电荷传输在极高的频率与适度的载流子迁移率的要求。
We demonstrate piezo-electrical generation of ultrahigh-frequency surface acoustic waves on silicon substrates, using high-resolution UV-based nanoimprint lithography, hydrogen silsequioxane planarization, and metal lift-off. Interdigital transducers were fabricated on a ZnO layer sandwiched between two SiO2 layers on top of a Si substrate. Excited modes up to 23.5 GHz were observed. Depth profile calculations of the piezoelectric field show this multilayer structure to be suitable for acoustic charge transport in silicon at extremely high frequencies with moderate carrier mobility requirements.