Rare-earth implanted Y2O3 thin films
Rare-earth implanted Y2O3 thin films
复制标题
DOI：
10.1016/j.apsusc.2007.02.121
复制
发表时间：
2007-07-31
影响因子：
6.7
通讯作者：
Skorupa, W.
中科院分区：
文献类型：
--
作者：
Peeva, A.;Dikovska, A. Og.;Skorupa, W.
采用脉冲激光沉积法在陶瓷靶上制备了Er，Yb共掺Y2 O3薄膜。随后在室温下用1.1MeV Er+离子注入6 × 1014 at/cm（2），以改变沉积膜的结构。所沉积的薄膜具有多晶柱状结构。离子注入在沉积膜中引入缺陷。在900 ℃氧气氛中退火1 h后，薄膜再结晶为圆形晶粒状结构，晶粒尺寸约为100 nm。Er 3+的光致发光响应，获得所有的薄膜通过激发通过交叉弛豫的Yb 3+离子。红外发射光谱，在1415和1514 nm的两个窄峰组成，不同于典型的光谱的Er掺杂的材料。在注入和随后的900 ℃退火后，在沉积膜中观察到的维斯发射光谱不出现。(c)2007 Elsevier B. V.保留所有权利。
Er, Yb co-doped Y2O3 films were grown by pulsed laser deposition from ceramic target. Subsequent ion implantation with 1.1 MeV Er+ ions to a fluence of 6 x 1014 at/cm(2) at room temperature was perfonned in order to modify the structure of the as-deposited films. The as-deposited films have a polycrystalline column-like structure. Ion implantation induces defects into the as-deposited films. After annealing at 900 degrees C for I h in oxygen atmosphere, the films recrystallize in roundly shaped grain-like structure with grain size of about 100 nm. The Er3+ photoluminescence response was obtained for all the films by excitation through cross-relaxation of Yb3+ ions. The IR emission spectrum, consisting of two narrow peaks at 1415 and 1514 nm, differs from the typical spectra of Er-doped materials. The VIS emission spectrum observed in as-deposited films does not appear after implantation and subsequent 900 degrees C annealing. (c) 2007 Elsevier B.V. All rights reserved.