Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM
复制标题
通过 TEM 研究 nMOSFET 超薄栅极氧化物恒流应力和恒压应力击穿失效机制的相关性
DOI：
10.1016/s0026-2714(03)00261-0
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
W. H. Lin
中科院分区：
文献类型：
--
作者：
K. Pey;C. Tung;M. Radhakrishnan;L. Tang;Y. Sun;X. Wang;W. H. Lin
