Influence of polyaniline doping concentration in (Bi0.5Sb0.5)2S3 thin polycrystalline films on structural, electrical and optical properties
Influence of polyaniline doping concentration in (Bi0.5Sb0.5)2S3 thin polycrystalline films on structural, electrical and optical properties
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DOI：
10.1016/j.jnoncrysol.2010.03.012
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发表时间：
2010-05-15
影响因子：
3.5
通讯作者：
Padiyan, Pathinettam D.
中科院分区：
文献类型：
--
作者：
Subramanian, S.;Lekha, Chithra P.;Padiyan, Pathinettam D.
本文报道了用酸性水溶液在不锈钢衬底和镀ITO导电玻璃衬底上电沉积三种不同浓度的(Bi0.5Sb0.5)(2)S-3多晶薄膜和聚苯胺掺杂薄膜。通过I-V研究，讨论了PANI对薄膜形成和沉积机理的影响。X射线衍射研究表明，在室温下沉积的所有薄膜均为多晶结构的正交结构薄膜。PANI浓度越高，微晶尺寸越大。PANI的加入改变了掺杂薄膜的表面形貌。光学研究表明，随着PANI浓度的增加，带隙从2.06 eV下降到1.68 eV。PANI掺杂薄膜的FTIR峰在1024 cm(-1)和第1373 cm(-1)处发生了位移。在不同温度下的电导率测量表明，所有薄膜都遵循Arrhenius行为，激活能随PANI浓度的增加而减小。(C)2010爱思唯尔B.V.保留所有权利。
The electrodeposition of as-deposited polycrystalline (Bi0.5Sb0.5)(2)S-3 thin film and polyaniline doped thin films for three different concentrations from aqueous acidic bath onto stainless steel substrate and ITO coated conducting glass substrate is described. The influence of PAni on the film formation and deposition mechanism is discussed using I-V studies. X-ray diffraction studies show polycrystalline nature of the thin films with orthorhombic structure for all the films deposited at room temperature. The crystallite size is found to increase with increase in PAni concentration. The surface morphology of the doped films changes due to the addition of PAni. The optical studies reveal that the band gap values decrease from 2.06 eV to 1.68 eV as the PAni concentration increases. PAni doped films show shifts in the FTIR peaks at 1024 cm(-1) and 1373 cm(-1). Electrical conductivity measurements carried out at different temperatures indicate that all the films follow Arrhenius behavior and that the activation energy decreases with increase in PAni concentration. (C) 2010 Elsevier B.V. All rights reserved.