Medium Voltage Power Switch in Silicon Carbide – a Comparative Study
Medium Voltage Power Switch in Silicon Carbide – a Comparative Study
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碳化硅中压功率开关 – 比较研究
DOI：
10.1109/access.2022.3156277
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发表时间：
2022
期刊：
影响因子：
3.9
通讯作者：
J. Rąbkowski
中科院分区：
文献类型：
--
作者：
Przemysław Trochimiuk;Rafał Kopacz;Krzysztof Frac;J. Rąbkowski
本文讨论了利用碳化硅（SiC）技术中的功率开关实现中压能量转换的各种解决方案。特别是，比较研究的重点是在1.5 kV直流下工作的逆变器相腿的四种不同变体，这在文献中尚未提出。第一种是基于标准的两电平半桥，由额定电压为450 a的3.3 kV SiC MOSFET功率模块构建。然后，考虑了1.2 kV/ 450a电源模块内器件串联的两级解决方案。最后，基于相同的1.2 kV器件，研究了两种不同模式下的飞行电容器相腿：标准三电平工作和准两电平模式，电容显著减小。本研究建立在深入实验的基础上：所有四个阶段的腿都是在实验室设计、制造和测试的。所有版本都以带感应负载的半桥结构连接。在相同的条件下进行了测试，以测试各种栅极电阻的整体性能和开关行为。此外，本文还从寄生、冷却性能、栅极驱动器和布局考虑等方面进行了分析和比较，为中压电力电子应用中SiC功率器件功率开关的选择提供指导。
This paper discusses various solutions of energy conversion in medium voltage using power switches in Silicon Carbide (SiC) technology. In particular, a comparative study is focused on four different variants of an inverter phase leg operating at 1.5 kV DC, which has not been presented in the literature yet. The first one is based on a standard two-level half-bridge built from a 3.3 kV SiC MOSFET power module rated at 450 A. Then, the two-level solution with series-connected devices inside 1.2 kV/450 A power modules is taken into account. Finally, a flying-capacitor phase leg also based on the same 1.2 kV devices is investigated in two different modes: a standard three-level operation and quasi-two-level mode with a significantly reduced capacitor. The presented study is founded on in-depth experiments: all four phase legs were designed, built, and tested in the laboratory. All versions were connected in a half-bridge configuration with an inductive load. Tests were conducted under identical conditions to test the overall performance and switching behavior for various gate resistances. In addition, different aspects are analyzed and compared in this paper, including parasitics, cooling performance, gate drivers and layout considerations, providing selection guidelines for power switches with SiC power devices in medium voltage power electronics applications.
适用于 DC-AC 中压电源转换应用的串联 SiC MOSFET 的混合电压平衡方法
影响因子：
6.7
作者：
Lin, Xiang;Ravi, Lakshmi;Burgos, Rolando;Dong, Dong
通讯作者：
Dong, Dong