Direct Imaging of Band Structure for Powdered Rhombohedral Boron Monosulfide by Microfocused ARPES-猫眼课题宝

DOI：

10.1021/acs.nanolett.2c04048

发表时间：

2023-02

期刊：

Nano Letters

影响因子：

10.8

通讯作者：

中科院分区：

材料科学1区

文献类型：

作者：

K. Sugawara;H. Kusaka;Tappei Kawakami;Koki Yanagizawa;A. Honma;S. Souma;K. Nakayama;M. Miyakawa;T. Taniguchi;M. Kitamura;K. Horiba;H. Kumigashira;Takashi Takahashi;S. Orimo;M. Toyoda;Susumu Saito;T. Kondo;Takafumi Sato

硼基二维（2D）材料是纳米电子学应用的极好平台。菱面体一硫化硼（r-BS）由于其独特的层状晶体结构而引起了人们的特别关注，该结构适合于探索起源于2D自然的各种功能性质。然而，阐明其基本电子状态的研究在很大程度上受到限制，因为只有微小的粉末晶体可用，阻碍了光谱学（如角分辨光电子能谱（ARPES））的精确研究。本文报道了用微聚焦ARPES技术对r-BS粉末晶体（~ 120 × 20 μ m ~ 2）的能带结构的直接测绘。我们发现r-BS是一种p型半导体，其禁带宽度大于0.5 eV，其特征在于面内有效质量各向异性。目前的研究结果表明，高适用性的micro-ARPES微小的粉末晶体，并扩大了机会，以获得尚未探索的各种新材料的电子状态。

Boron-based two-dimensional (2D) materials are an excellent platform for nanoelectronics applications. Rhombohedral boron monosulfide (r-BS) is attracting particular attention because of its unique layered crystal structure suitable for exploring various functional properties originating in the 2D nature. However, studies to elucidate its fundamental electronic states have been largely limited because only tiny powdered crystals were available, hindering a precise investigation by spectroscopy such as angle-resolved photoemission spectroscopy (ARPES). Here we report the direct mapping of the band structure with a tiny (∼20 × 20 μm2) r-BS powder crystal by utilizing microfocused ARPES. We found that r-BS is a p-type semiconductor with a band gap of >0.5 eV characterized by the anisotropic in-plane effective mass. The present results demonstrate the high applicability of micro-ARPES to tiny powder crystals and widen an opportunity to access the yet-unexplored electronic states of various novel materials.

Direct Imaging of Band Structure for Powdered Rhombohedral Boron Monosulfide by Microfocused ARPES

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